HMC441 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6.0 - 18.0 GHz

v02.0304
MICROWAVE CORPORATION
HMC441
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 6.0 - 18.0 GHz
Gain, Power & Output IP3
vs. Gate Voltage @ 12 GHz
35
210
30
180
25
Idd ₁₅₀
20
120
15
90
10
5
0
-1
60
Gain
P1dB
Psat 30
OIP3
0
-0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0
Vgg1, Vgg2 Gate Voltage (Vdc)
1
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
+5.5 Vdc
Gate Bias Voltage (Vgg1,Vgg2)
-8.0 to 0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +20 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 10 mW/°C above 85 °C)
0.9 W
Thermal Resistance
(channel to die bottom)
100 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+4.5
88
+5.0
90
+5.5
92
+2.7
80
+3.0
82
+3.3
83
Note: Amplifier will operate over full voltage ranges shown above
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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