HMC397 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 10.0 GHz

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MICROWAVE CORPORATION
HMC397
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 10.0 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
+7.0 Vdc
RF Input Power (RFin)(Vcc = +5.0 Vdc) +10 dBm
Junction Temperature
150 °C
Continuous Pdiss (T= 85 °C)
(derate 5.21 mW/°C above 85 °C)
0.339 W
Thermal Resistance
(junction to die bottom)
192 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
1
Outline Drawing
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. ALL TOLERANCES ARE ±0.001 (0.025)
3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND
4. BOND PADS ARE 0.004 (0.100) SQUARE
5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150)
6. BACKSIDE METALLIZATION: GOLD
7. BOND PAD METALLIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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