HMC392LC4 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz

v00.0607
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 6.5 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+7 Vdc
+11 dBm
175 °C
0.42 W
155 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC392LC4
GaAs MMIC LOW NOISE
AMPLIFIER, 3.5 - 7.0 GHz
5
Typical Supply Current vs. Vdd
Vdd (Vdc)
+4.5
+5.0
+5.5
Idd (mA)
59
60
60
Note: Amplifier will operate over full voltage ranges shown
above.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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