HMC383_09 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz

v02.0907
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+5.5 Vdc
RF Input Power (RFIN)(Vdd = +5.0 Vdc) +10 dBm
Channel Temperature
175 °C
Continuous Pdiss (T= 85 °C)
(derate 9.9 mW/°C above 85 °C)
0.89 W
Thermal Resistance
(channel to die bottom)
101.0 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
ESD Sensitivity (HBM)
Class 1A
Outline Drawing
HMC383
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 12 - 30 GHz
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+4.5
100
+5.0
101
+5.5
102
Note: Amplifier will operate over full voltage ranges shown above
3
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. OVERALL DIE SIZE ± .002
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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