HMC283_07 Datasheet, PDF (4/8 Pages) Hittite Microwave Corporation – GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz

v03.1007
Absolute Maximum Ratings
Drain Bias Voltage
(Vdd1, Vdd2, Vdd3, Vdd4)
Drain Bias Current (Idd)
Gate Bias Voltage
(Vgg1, Vgg2, Vgg3, Vgg4)
Gate Bias Current (Igg)
RF Input Power (RFIN)(Vdd = +3.5 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 13.04 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+5Vdc
400 mA
-2 to +0.4Vdc
4 mA
+8 dBm
175 °C
1.174 W
76.7 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC283
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3
Die Packaging Information ^[1]
Standard
Alternate
GP-2
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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