HMC282_00 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs MMIC LOW NOISE AMPLIFIER, 36 - 40 GHz

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MICROWAVE CORPORATION
Absolute Maximum Ratings
Supply Voltage (Vdd)
Supply Current (ldd)
Gate Bias Voltage (Vgg)
DC Gate Current (Igg)
Input Power (RFin) (Vdd = +3V)
Channel Temperature (Tc)
Thermal Resistance ( jc)
(Channel Backside)
Storage Temperature
Operating Temperature
+4 Vdc
200 mA
-2 to +0.4V
4 mA
+13 dBm
175 °C
90 °C/W
-65 to +150 °C
-55 to +85 °C
Outline Drawing
HMC282
GaAs MMIC LOW NOISE
AMPLIFIER, 36 - 40 GHz
1
ALL DIMENSION IN INCHES.
ALL TOLERANCES ARE ± 0.025 (0.001).
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND.
BOND PADS ARE 0.100 (0.004) SQUARE.
BACKSIDE METALLIZATION: GOLD.
BOND PAD METALLIZATION: GOLD.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Visit us at www.hittite.com, or Email at [e-mail]
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