HMC173MS8_01 Datasheet, PDF (4/6 Pages) Hittite Microwave Corporation – GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 0.8 - 2.0 GHz

v01.0801
HMC173MS8
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 0.8 - 2.0 GHz
Absolute Maximum Ratings
V
CTL
Vdd
Maximum Input Power
Vdd = +4.0 Vdc
Storage Temperature
Operating Temperature
-0.2 Vdc to Vdd
+8 Vdc
+29 dBm
+21 dBm
Min. Attenuation
Atten. >2 dB
-65 to +150 °C
-40 to +85 °C
Control and Bias Voltage
V
0 to +3 Vdc @ -100 μA to +100 μA
CTL
Vdd
+4.0 Vdc +/- 0.1 Vdc @ +100 μA
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*Note: DC blocking capacitors are required for each RF port.
Capacitor value determines lowest frequency of operation.
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEADFRAME MATERIAL: COPPER ALLOY
3. LEADFRAME PLATING: Sn/Pb SOLDER
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com
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