English
Language : 

HMC478SC70_09 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz
v00.0607
HMC478SC70 / 478SC70E
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
P1dB vs. Temperature
9
24
20
16
12
+25C
8
+85C
-40C
4
0
0
1
2
3
4
5
FREQUENCY (GHz)
Psat vs. Temperature
24
20
16
12
+25C
8
+85C
-40C
4
0
0
1
2
3
4
5
FREQUENCY (GHz)
Output IP3 vs. Temperature
35
30
25
+25C
20
+85C
-40C
15
10
0
1
2
3
4
5
FREQUENCY (GHz)
Gain, Power & Output IP3 vs. Supply
Voltage for Rs = 18 Ohms @ 850 MHz
34
32
30
28
26
24
22
20
18
16
14
12
10
8
4.75
5
Vs (Vdc)
Gain
P1dB
Psat
IP3
5.25
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V, RBIAS= 18 Ohms
80
75
+85C
70
65
+25C
60
55
-40C
50
45
40
3.60
3.70
3.80
3.90
4.00
4.10
4.20
Vcc (V)
9 - 98
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com