HMC462 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz

MICROWAVE CORPORATION
v00.0703
HMC462
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz
1
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20
25
19
24
18
23
+25C
17
22
+85C
16
21
-55C
15
20
14
19
13
18
12
17
11
16
10
15
9
+25C
14
8
+85C
13
7
-40C
12
6
11
5
10
0 2 4 6 8 10 12 14 16 18 20 22
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs. Temperature
30
29
28
27
26
25
24
23
22
21
20
19
+25C
18
+85C
17
-40C
16
15
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Gain, Power, Noise Figure & Supply
Current vs. Supply Voltage @ 10 GHz
20
74
18
72
16
70
14
68
12
66
10
64
8
62
6
Gain
60
P1dB
4
Noise Figure
Idd ⁵⁸
2
56
0
54
4.5
5
5.5
6
6.5
7
7.5
8
Vdd SUPPLY VOLTAGE (Vdc)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+9.0 Vdc
RF Input Power (RFin)(Vdd = +5.0 Vdc) +23 dBm
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 50 mW/°C above 85 °C)
4.5 W
Thermal Resistance
(channel to die bottom)
20 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
+7.0
+7.5
+8.0
Idd (mA)
62
63
64
65
66
67
1 - 78
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
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