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HMC347C8_06 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz
v01.0404
HMC347C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
8
Absolute Maximum Ratings
RF Input Power (Vctl = -5V)
Control Voltage Range (A & B)
Channel Temperature
Thermal Resistance
(Insertion Loss Path)
Thermal Resistance
(Terminated Path)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+27 dBm
+0.5V to -7.5 Vdc
150 °C
440 °C/W
540 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Control Voltages
State
Low
High
Bias Condition
0 to -0.2V @ 10 uA Max.
-5V @ 10 uA Typ. to -7V @ 40 uA Typ. (± 0.5 Vdc)
Truth Table
Control Input
A
B
High
Low
Low
High
Signal Path State
RFC to RF1 RFC to RF2
On
Off
Off
On
Caution: Do not “Hot Switch” power levels greater than +13
dBm (Vctl = 0/-5 Vdc).
Outline Drawing
8 - 198
NOTES:
1. PACKAGE BODY MATERIAL: WHITE ALUMINA 92%
2. LEAD, PACKAGE BOTTOM MATERIAL: COPPER
3. PLATING: ELECTROLYTIC GOLD 100-200 MICROINCHES, OVER
ELECTROLYTIC NICKEL 100-250 MICROINCHES.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. PACKAGE LENGTH AND WIDTH DIMENSIONS DO NOT INCLUDE LID
SEAL PROTRUSION .005 PER SIDE.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com