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HMC232G8_06 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs MMIC HIGH ISOLATION SMT SPDT SWITCH, DC - 6.0 GHz
v01.1105
HMC232G8
GaAs MMIC HIGH ISOLATION SMT
SPDT SWITCH, DC - 6.0 GHz
8
Absolute Maximum Ratings
RF Input Power (Vctl= -5V)
(0.5 - 6 GHz)
Control Voltage Range (A & B)
Channel Temperature
Thermal Resistance (R )
TH
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+30 dBm (@ +50 °C)
+1.0V to -7.5 Vdc
150 °C
94 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Control Voltages
State
Low
High
Bias Condition
0 to -0.2V @ 10 uA Max.
-5V @ 10 uA Typ. to -7V @ 45 uA Typ.
Truth Table
Control Input
A
B
High
Low
Low
High
Signal Path State
RFC to RF1 RFC to RF2
ON
OFF
OFF
ON
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Caution: Do not “Hot Switch” power levels greater than +27
dBm (Vctl = 0/-5 Vdc).
Outline Drawing
8 - 74
NOTES:
1. PACKAGE MATERIAL: ALUMINA LOADED BOROSILICATE GLASS.
2. LEADS, BASE, COVER MATERIAL: KOVAR™ (#7052 CORNING).
3. PLATING: ELECTROLYTIC GOLD 50 MICROINCHES MIN., OVER
ELECTROLYTIC NICKEL 50 MICROINCHES MIN.
4. ALL DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. TOLERANCES: .±005 [0.13] UNLESS OTHERWISE SPECIFIED.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com