HMC-APH460 Datasheet, PDF (3/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC 0.5 WATT POWER AMPLIFIER, 27 - 31.5 GHz

v02.0208
HMC-APH460
GaAs HEMT MMIC 0.5 WATT POWER
AMPLIFIER, 27 - 31.5 GHz
3
Absolute Maximum Ratings
Drain Bias Voltage
+5.5 Vdc
Gate Bias Voltage
-1 to +0.3 Vdc
RF Input Power
20 dBm
Thermal Resistance Channel
to Die Bottom
69.7 °C/W
Storage Temperature
-65 °C to + 150 °C
Die Bottom Temperature for
MTTF of 10⁶ Hours
33 °C *
Die Bottom Temperature for
MTTF of 10⁵ Hours
63 °C *
* Maximum junction temperature for die bottom at 85 °C is
simulated to be 232 °C. MTTF in this condition is estimated
to be 5 x 10⁴ hrs.
Outline Drawing
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3 - 174
Die Packaging Information ^[1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ^{±.002”}
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com