English
Language : 

HMC969 Datasheet, PDF (1/10 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
v00.1210
Typical Applications
The HMC969 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
HMC969
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 40 - 43.5 GHz
Features
Saturated Output Power: +31 dBm @ 15% PAE
Output IP3: +38 dBm
High Gain: 22 dB
DC Supply: +6V @ 900 mA
No External Matching Required
Die Size: 2.77 x 2.32 x 0.1 mm
General Description
The HMC969 is a 4 stage GaAs pHEMT MMIC 1 Watt
Power Amplifier which operates between 40 and 43.5
GHz. The HMC969 provides 22 dB of gain, +31 dBm
of saturated output power, and 15% PAE from a +6V
supply. With a very good IP3 of 38 dBm, the HMC969
is ideal for linear applications including military and
space as well as point-to-point and point-to-multi-point
radios. All data is taken with the chip in a 50 Ohm test
fixture connected via (2) 0.025 mm (1 mil) diameter
wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 900 mA [1]
Parameter
Min.
Frequency Range
Gain
19
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)[2]
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 900 mA typical.
[2] Measurement taken at +6V @ 900 mA, Pout / Tone = +18 dBm
Typ.
40 - 43.5
22
0.03
14
27
28
31
38
900
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com