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HMC968 Datasheet, PDF (1/10 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 37 - 40 GHz
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Typical Applications
The HMC968 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
HMC968
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 37 - 40 GHz
Features
Saturated Output Power: +32 dBm @ 15% PAE
High Output IP3: +38 dBm
High Gain: 21 dB
DC Supply: +6V @ 900 mA
No External Matching Required
Die Size: 2.76 x 2.33 x 0.1 mm
General Description
The HMC968 is a 4 stage GaAs pHEMT MMIC 1
Watt Power Amplifier which operates between 40 and
43.5 GHz. The HMC968 provides 21 dB of gain, +32
dBm of saturated output power, and 15% PAE from
a +6V supply. With a very good IP3 performance of
+38 dBm, the HMC968 is ideal for linear applications
including point-to-point and point-to-multi-point ra-
dios. All data is taken with the chip in a 50 Ohm test
fixture connected via (2) 0.025 mm (1 mil) diameter
wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +6V, Idd = 900 mA [1]
Parameter
Min.
Typ.
Max.
Frequency Range
37 - 40
Gain
19
22
Gain Variation Over Temperature
0.03
Input Return Loss
17
Output Return Loss
14
Output Power for 1 dB Compression (P1dB)
30.5
Saturated Output Power (Psat)
32
Output Third Order Intercept (IP3)[2]
38
Total Supply Current (Idd)
900
[1] Adjust Vgg between -2 to 0V to achieve Idd = 900 mA typical.
[2] Measurement taken at +6V @ 900 mA, Pout / Tone = +20 dBm
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com