HMC949 Datasheet, PDF (1/10 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER WITH POWER DETECTOR, 12 - 16 GHz

HMC949
v01.1010
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Typical Applications
The HMC949 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Features
Saturated Output Power: +35.5 dBm @ 26% PAE
High Output IP3: +42 dBm
High Gain: 31 dB
DC Supply: +7V @ 1200 mA
No External Matching Required
Die Size: 2.71 x 1.73 x 0.1 mm
Functional Diagram
General Description
The HMC949 is a 4 stage GaAs pHEMT MMIC 2
Watt Power Amplifier with an integrated temperature
compensated on-chip power detector which operates
between 12 and 16 GHz. The HMC949 provides
31 dB of gain, +35.5 dBm of saturated output power,
and 26% PAE from a +7V supply. The HMC949
exhibits excellent linearity and is optimized for high
capacity digital microwave radio. It is also ideal for
13.75 to 14.5 GHz Ku Band VSAT transmitters as well
as SATCOM applications. All data is taken with the
chip in a 50 Ohm test fixture connected via (2) 0.025
mm (1 mil) diameter wire bonds of 0.31 mm (12 mil)
length.
Electrical Specifications
T_A = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA ^[1]
Parameter
Min.
Typ.
Max.
Frequency Range
12 - 16
Gain
28
31
Gain Variation Over Temperature
0.05
Input Return Loss
10
Output Return Loss
17
Output Power for 1 dB Compression (P1dB)
32.5
34.5
Saturated Output Power (Psat)
35.5
Output Third Order Intercept (IP3)^[2]
42
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1200mA typical.
[2] Measurement taken at +7V @ 1200mA, Pout / Tone = +22 dBm
1200
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]