HMC907 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, 0.2 - 22 GHz

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Typical Applications
The HMC907 is ideal for:
• Test Instrumentation
3
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
HMC907
GaAs PHEMT MMIC
POWER AMPLIFIER, 0.2 - 22 GHz
Features
High P1dB Output Power: +27 dBm
High Gain: 14 dB
High Output IP3: +38 dBm
Single Supply: +10V @ 350 mA
50 Ohm Matched Input/Output
Die Size: 2.91 x 1.33 x 0.1 mm
General Description
The HMC907 is a GaAs MMIC pHEMT Distributed
Power Amplifier die which operates between 0.2 and
22 GHz. This self-biased power amplifier provides
14 dB of gain, 38 dBm output IP3 and +27 dBm of
output power at 1 dB gain compression while requir-
ing only 350mA from a +10V supply. Gain flatness is
excellent at ±0.6 dB from DC to 12 GHz making the
HMC907 ideal for EW, ECM, Radar and test equip-
ment applications. The HMC907 amplifier I/Os are
internally matched to 50 Ohms facilitating integration
into Mutli-Chip-Modules (MCMs). All data is taken
with the chip connected via two 0.025mm (1 mil) wire
bonds of minimal 0.31 mm (12 mils) length.
Electrical Specifications, T_A = +25 °C, Vdd = +10V, Idd = 350mA
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current
(Idd) (Vdd= 10V)
Min. Typ. Max.
0.2 - 8
12
13.5
±0.6
0.008
15
15
23
26
28.5
37
3.5
350
Min.
Typ. Max.
8 - 16
12
13.5
±0.5
0.008
15
20
25
27
29.5
38
2.5
350
Min.
Typ. Max. Units
16 - 22
GHz
12.5
14
dB
±0.3
dB
0.009
dB/ °C
15
dB
15
dB
23
25.5
dBm
28.5
dBm
37
dBm
3.0
dB
350
mA
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]