HMC906 Datasheet, PDF (1/10 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.3 - 33.5 GHz

v03.0911
Typical Applications
The HMC906 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC906
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 27.3 - 33.5 GHz
Features
Saturated Output Power: +34 dBm @ 22% PAE
High Output IP3: +43 dBm
High Gain: 23 dB
DC Supply: +6V @ 1200 mA
No External Matching Required
Die Size: 3.18 x 2.73 x 0.1 mm
General Description
The HMC906 is a four stage GaAs pHEMT MMIC
2 Watt Power Amplifier which operates between
27.3 and 33.5 GHz. The HMC906 provides 23 dB of
gain, and +34 dBm of saturated output power and 22%
PAE from a +6V supply. The RF I/Os are DC blocked
and matched to 50 Ohms for ease of integration into
Multi-Chip-Modules (MCMs). All data is taken with
the chip in a 50 Ohm test fixture connected via two
0.025 mm (1 mil) diameter wire bonds of length 0.31
mm (12 mils).
Electrical Specifications, T_A = +25° C, Vdd1 = Vdd2 = +6 V, Idd = 1200 mA ^[1]
Frequency Range
Parameter
Min.
Typ.
Max.
27.3 - 31.5
Min.
Typ.
Max.
31.5 - 33.5
Gain
Gain Variation Over Temperature
Input Return Loss
20
23
0.022
10
14
20
23
0.026
10
14
Output Return Loss
Output Power for 1 dB Compression (P1dB)
8
12
31
33
10
30.5
12
32.5
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)^[2]
34
40
43
33.5
39
42
Total Supply Current (Idd)
[1] Adjust Vgg (pad 2 or 12) between -2 to 0V to achieve Idd = 1200 mA typical.
[2] Measurement taken at +6V @ 1200 mA, Pout / Tone = +23 dBm
1200
1200
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]