HMC902LP3E Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 5 - 10 GHz

v01.0310
7
Typical Applications
This HMC902LP3E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC902LP3E
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 5 - 10 GHz
Features
Low Noise Figure: 1.8 dB
High Gain: 19 dB
High P1dB Output Power: 16 dBm
Single Supply: +3.5 V @ 80 mA
Output IP3: +28 dBm
50 Ohm matched Input/Output
16 Lead 3x3mm SMT Package: 9mm²
General Description
The HMC902LP3E is a GaAs MMIC Low Noise
Amplifier housed in a leadless 3x3 mm plastic sur-
face mount package. The amplifier operates between
5 and 10 GHz, providing 19 dB of small signal
gain, 1.8 dB noise figure, and output IP3 of +28 dBm,
while requiring only 80 mA from a +3.5V supply. The
P1dB output power of +16 dBm enables the LNA to
function as a LO driver for balanced, I/Q or image
reject mixers. The HMC902LP3E also features
I/Os that are DC blocked and internally matched to
50 Ohms, making it ideal for high capacity microwave
radios and C-Band VSAT applications.
7-1
Electrical Specifications, T_A = +25° C, Vdd1 = Vdd2 = +3.5V, Idd = 80 mA ^[2]
Parameter
Min.
Typ.
Max.
Frequency Range
5 - 10
Gain ^[1]
17
19.5
Gain Variation over Temperature
0.01
Noise Figure ^[1]
1.8
2.2
Input Return Loss
12
Output Return Loss
15
Output Power for 1 dB Compression ^[1]
16
Saturated Output Power (Psat) ^[1]
17.5
Output Third Order Intercept (IP3)
28
Supply Current (Idd)
(Vdd = 3.5V, set Vgg2 = 0V, Vgg1 = 0V Typ.)
80
110
[1] Board loss removed from gain, power and noise figure measurement.
[2] Vgg1 = Vgg2 = open for normal, self-biased operation.
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]