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HMC864_10 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 24 - 29.5 GHz
v01.0110
Typical Applications
The HMC864 is ideal for:
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
HMC864
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Features
Saturated Output Power: +31 dBm @ 18% PAE
High Output IP3: +40 dBm
High Gain: 27 dB
DC Supply: +6V @ 750mA
No External Matching Required
Die Size: 2.41 x 1.65 x 0.1 mm
General Description
The HMC864 is a three stage GaAs pHEMT MMIC
1 Watt Power Amplifier which operates between
24 and 29.5 GHz. The HMC864 provides 27 dB of
gain, and +31 dBm of saturated output power and
18% PAE from a +6V supply. The RF I/Os are DC
blocked and matched to 50 Ohms for ease of integra-
tion into Multi-Chip-Modules (MCMs). All data is taken
with the chip in a 50 Ohm test fixture connected via
0.025 mm (1 mil) diameter wire bonds of length 0.31
mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 750mA [1]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Max.
Frequency Range
24 - 27
27 - 29.5
Gain
24
27
22
25
Gain Variation Over Temperature
0.021
0.027
Input Return Loss
27
25
Output Return Loss
19
14
Output Power for 1 dB Compression (P1dB)
27
29
27
29
Saturated Output Power (Psat)
31
30
Output Third Order Intercept (IP3)[2]
39
40
Total Supply Current (Idd)
750
750
[1] Adjust Vgg between -2 to 0V to achieve Idd = 750mA typical.
[2] Measurement taken at +6V @ 750mA, Pout / Tone = +19 dBm
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3 - 158
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com