HMC863LP4E Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs pHEMT MMIC WATT POWER AMPLIFIER, 22 - 26.5 GHz

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Typical Applications
The HMC863LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
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• Military & Space
Functional Diagram
HMC863LP4E
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 22 - 26.5 GHz
Features
Saturated Output Power:
up to +27.5 dBm @ 15% PAE
High Output IP3: +33 dBm
High Gain: 21.5 dB
DC Supply: +6V @ 350mA
No External Matching Required
24 Lead 4x4 mm SMT Package: 16 mm²
General Description
The HMC863LP4E is a three stage GaAs pHEMT
MMIC ½ Watt Power Amplifier which operates be-
tween 22 and 26.5 GHz. The HMC863LP4E provides
21.5 dB of gain, +27.5 dBm of saturated output pow-
er and 15% PAE from a +6V supply. High output IP3
makes the HMC863LP4E ideal for point-to-point and
point-to-multi-point radio systems as well as VSAT ap-
plications. The RF I/Os are DC blocked and matched
to 50 Ohms for ease of integration into higher level
assemblies. The HMC863LP4E can also be operated
from a 5V supply with only a slight decrease in output
power & IP3.
Electrical Specifications, T_A = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 350mA ^[1]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
22 - 26.5
GHz
Gain
19
21.5
dB
Gain Variation Over Temperature
0.032
dB/ °C
Input Return Loss
11
dB
Output Return Loss
15
dB
Output Power for 1 dB Compression (P1dB)
22
24.5
dBm
Saturated Output Power (Psat)
27
dBm
Output Third Order Intercept (IP3)^[2]
33
dBm
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 350mA typical.
[2] Measurement taken at +6V @ 350mA, Pout / Tone = +14 dBm
350
380
mA
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]