HMC814LC3B_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, 13 - 24.6 GHz OUTPUT

v00.1009
HMC814LC3B
SMT GaAs MMIC x2 ACTIVE FREQUENCY
MULTIPLIER, 13 - 24.6 GHz OUTPUT
Typical Applications
7
The HMC814LC3B is ideal for:
• Clock Generation Applications:
SONET OC-192 & SDH STM-64
• Point-to-Point & VSAT Radios
• Test Instrumentation
• Military & Space
• Sensors
Features
High Output Power: +17 dBm
Low Input Power Drive: 0 to +6 dBm
Fo Isolation: >20 dBc @ Fout = 19 GHz
100 kHz SSB Phase Noise: -136 dBc/Hz
Single Supply: +5V @ 88mA
12 Lead 3x3mm SMT Package: 9mm2
Functional Diagram
General Description
The HMC814LC3B is a x2 active broadband frequ-
ency multiplier utilizing GaAs PHEMT technology
in a leadless RoHS compliant SMT package. When
driven by a +4 dBm signal, the multiplier provides
+17 dBm typical output power from 13 to 24.6 GHz.
The Fo, 3Fo and 4Fo isolations are >20 dBc at 19 GHz.
The HMC814LC3B is ideal for use in LO multiplier
chains for Pt-to-Pt & VSAT Radios yielding reduced
parts count vs. traditional approaches. The low ad-
ditive SSB Phase Noise of -136 dBc/Hz at 100 kHz
offset helps maintain good system noise perfor-
mance. The RoHS packaged HMC814LC3B elim-
inates the need for wire bonding, and allows the use of
surface mount manufacturing techniques.
Electrical Specifications, T_A = +25° C, Vdd1, Vdd2 = +5V, +4 dBm Drive Level
Parameter
Min.
Typ.
Max.
Frequency Range, Input
6.5 - 12.3
Frequency Range, Output
13 - 24.6
Output Power
14
17
Fo Isolation (with respect to output level)
25
3Fo Isolation (with respect to output level)
25
Input Return Loss
10
Output Return Loss
12
SSB Phase Noise (100 kHz Offset @ Input Frequency = 19 GHz)
-136
Supply Current (Idd1 & Idd2)
70
88
100
Units
GHz
GHz
dBm
dBc
dBc
dB
dB
dBc/Hz
mA
7 - 124
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com