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HMC788LP2E Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – pHEMT GAIN BLOCK MMIC AMPLIFIER, DC - 10 GHz
v02.0311
Typical Applications
8
The HMC788LP2E is ideal for:
• Cellular/3G & LTE/WiMAX/4G
• LO Driver Applications
• Microwave Radio
• Test & Measurement Equipment
• UWB Communications
Functional Diagram
HMC788LP2E
pHEMT GAIN BLOCK
MMIC AMPLIFIER, DC - 10 GHz
Features
P1dB Output Power: +20 dBm
Output IP3: +30 dBm
Gain: 14 dB
50 Ohm I/O’s
6 Lead 2x2 mm DFN SMT Package: 4 mm2
General Description
The HMC788LP2E is a GaAs pHEMT Gain Block
MMIC SMT DC to 10 GHz amplifier. This 2x2 mm
DFN packaged amplifier can be used as either a
cascadable 50 Ohm gain stage or to drive the LO port
of many of HIttite’s single and double-balanced mixers
with up to +20 dBm output power. The HMC788LP2E
offers 14 dB of gain and an output IP3 of +30 dBm
while requiring only 76 mA from a +5V supply. The
Darlington feedback pair exhibits reduced sensitivity
to normal process variations and yields excellent gain
stability over temperature while requiring a minimal
number of external bias components.
Electrical Specifications, Vcc = 5V, TA = +25° C
Gain
Parameter
Gain Variation Over Temperature
Return Loss Input
Return Loss Output
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
DC - 6.0 GHz
6.0 - 10.0 GHz
DC - 6.0 GHz
6.0 - 10.0 GHz
DC - 6.0 GHz
6.0 - 10.0 GHz
DC - 6.0 GHz
6.0 - 10.0 GHz
DC - 10.0 GHz
DC - 6.0 GHz
6.0 - 10.0 GHz
DC - 6.0 GHz
6.0 - 10.0 GHz
DC - 6.0 GHz
6.0 - 10.0 GHz
Min.
Typ.
12
14
9
12
0.012
0.025
16
9
9
15
25
18
20
15
18
30
27
7
9
76
Max.
Units
dB
dB
dB/ °C
dB/ °C
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com