HMC772LC4_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz

v01.0709
7
Typical Applications
This HMC772LC4 is ideal for:
• Wideband Communication Systems
• Surveillance Systems
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
HMC772LC4
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 - 12 GHz
Features
Noise Figure: 1.8 dB
Gain: 15 dB
Output IP3: +25 dBm
P1dB Output Power: +13 dBm
50 Ohm Matched Input/Output
Supply Voltage: +4V @ 45 mA
24 Lead Ceramic 4x4mm SMT Package: 16mm²
General Description
The HMC772LC4 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier which operates between 2 and
12 GHz. The amplifier provides 15 dB of gain, 1.8 dB
noise figure up to 12 GHz and output IP3 of +25 dBm,
while requiring only 45 mA from a +4V supply voltage.
The Psat output power of up to +15 dBm enables the
LNA to function as a LO driver for many of HIttite’s
balanced, I/Q or image reject mixers. The HMC772LC4
also features I/Os that are DC blocked and internally
matched to 50 Ohms, making it ideal for SMT based
high capacity microwave radio applications. The
HMC772LC4 is housed in a RoHS compliant 4x4 mm
QFN leadless ceramic package.
Electrical Specifications, T_A = +25° C, Vdd= +4V, Idd = 45 mA*
Parameter
Min.
Typ.
Frequency Range
2 - 12
Gain
14
15
Gain Variation over Temperature
0.01
Noise Figure
1.8
Input Return Loss
15
Output Return Loss
15
Output Power for 1 dB Compression
13
Output Third Order Intercept (IP3)
25
Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.)*
45
* Adjust Vgg between -1 to 0.3V to achieve Idd = 45mA typical.
Max.
2.5
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
mA
7-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]