HMC737LP4 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz

HMC737LP4 / 737LP4E
v00.1108
MMIC VCO w/ HALF FREQUENCY OUTPUT
14.9 - 15.5 GHz
Typical Applications
The HMC737LP4(E) is ideal for:
• Point to Point/Multipoint Radio
• Test Equipment & Industrial Controls
• SATCOM
• Military End-Use
Functional Diagram
12
Features
Dual Output: Fo = 14.9 - 15.5 GHz
Fo/2 = 7.45 - 7.75 GHz
Pout: +9 dBm
Phase Noise: -105 dBc/Hz @ 100 kHz
No External Resonator Needed
24 Lead 4x4mm SMT Package: 16mm²
General Description
The HMC737LP4(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) MMIC VCO. The
HMC737LP4(E) integrate a resonator, negative
resistance device, varactor diode and feature half
frequency output. The VCO’s phase noise performance
is excellent over temperature, shock, and process due
to the oscillator’s monolithic structure. Power output
is +9 dBm typical from a +4.2V supply voltage. The
voltage controlled oscillator is packaged in a leadless
QFN 4x4 mm surface mount package, and requires no
external matching components.
Electrical Specifications, T_A = +25° C, Vcc = +4.2V
Frequency Range
Parameter
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Min.
Fo
Fo/2
RFOUT
6
RFOUT/2
-8
Vtune
1
120
1/2
3/2
Typ.
14.9 - 15.5
7.45 - 7.75
9
-3
-105
150
2.5
-45
-42
12
24
1.2
Max.
13
2
13
180
10
Units
GHz
GHz
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
12 - 226
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com