HMC735LP5 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – MMIC VCO w/ DIVIDE-BY-4 10.5 - 12.2 GHz

v03.0609
Typical Applications
The HMC735LP5(E) is ideal for:
• Point-to-Point/Multi-Point Radio
• Test Equipment & Industrial Controls
• SATCOM
• Military End-Use
Functional Diagram
12
HMC735LP5 / 735LP5E
MMIC VCO w/ DIVIDE-BY-4
10.5 - 12.2 GHz
Features
Dual Output: Fo = 10.5 - 12.2 GHz
Fo/4 = 2.625 - 3.05 GHz
Pout: +17 dBm
Phase Noise: -100 dBc/Hz @ 100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
General Description
The HMC735LP5(E) is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO. The
HMC735LP5(E) integrates resonators, negative
resistance devices, varactor diodes and features a
divide-by-4 frequency output. The VCO’s phase noise
performance is excellent over temperature, shock,
and process due to the oscillator’s monolithic
structure. Power output is +17 dBm typical from a
+5V supply voltage. The prescaler function can be dis-
abled to conserve current if not required. The voltage
controlled oscillator is packaged in a leadless QFN
5x5 mm surface mount package, and requires no
external matching components.
Electrical Specifications, T_A = +25° C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V
Parameter
Frequency Range
Power Output
SSB Phase Noise @ 100 kHz Offset,
Vtune= +5V @ RFOUT
Tune Voltage
Supply Current
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Min.
Typ.
Max.
Fo
Fo/4
10.5 - 12.2
2.625 - 3.05
RFOUT
14
21
RFOUT/4
-8
-1
-100
Vtune
1
13
Icc(Dig) + Icc(Amp) + Icc(RF)
180
217
240
10
8
1/2
-65
2nd
-18
3rd
-40
50
30
1.4
Units
GHz
GHz
dBm
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
dBc
MHz pp
MHz/V
MHz/°C
12 - 214
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com