HMC592_09 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 10 - 13 GHz

v02.0109
HMC592
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 10 - 13 GHz
Typical Applications
Features
The HMC592 is ideal for use as a power amplifier for:
Saturated Output Power:
• Point-to-Point Radios
+31 dBm @ 21% PAE
3
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
Output IP3: +38 dBm
Gain: 19 dB
• Military End-Use
DC Supply: +7V @ 750 mA
• Space
50 Ohm Matched Input/Output
Die Size: 2.47 x 1.17 x 0.1 mm
Functional Diagram
General Description
The HMC592 is a high dynamic range GaAs PHEMT
MMIC 1 Watt Power Amplifier which operates from
10 to 13 GHz. This amplifier die provides 19 dB of
gain and +31 dBm of saturated power, at 21% PAE
from a +7V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into Multi-
Chip-Modules (MCMs). All data is taken with the chip
in a 50 ohm test fixture connected via 0.025mm (1
mil) diameter wire bonds of length 0.31mm (12 mils).
For applications which require optimum OIP3, Idd
should be set for 400 mA, to yield +38 dBm OIP3. For
applications which require optimum output P1dB, Idd
should be set for 750 mA, to yield +31 dBm Output
P1dB.
Electrical Specifications, T_A = +25° C, Vdd = +7V, Idd = 750 mA*
Parameter
Min.
Frequency Range
Gain
16
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
28
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)^[2]
Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd= 750 mA typical.
[2] Measurement taken at 7V @ 400mA, Pin / Tone = -15 dBm
Typ.
10 - 13
19
0.05
10
12
31
31.2
38
750
Max.
800
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3 - 86
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com