HMC590_09 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6 - 10 GHz

v02.0109
HMC590
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6 - 10 GHz
Typical Applications
Features
The HMC590 is ideal for use as a power amplifier for:
Saturated Output Power: +31.5 dBm @ 25% PAE
• Point-to-Point Radios
3
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
Output IP3: +41 dBm
Gain: 24 dB
DC Supply: +7V @ 820 mA
• Military End-Use
50 Ohm Matched Input/Output
• Space
Die Size: 2.47 x 1.33 x 0.1 mm
Functional Diagram
General Description
The HMC590 is a high dynamic range GaAs PHEMT
MMIC 1 Watt Power Amplifier which operates from
6 to 10 GHz. This amplifier die provides 24 dB of
gain, +31.5 dBm of saturated power at 25% PAE
from a +7V supply. The RF I/Os are DC blocked and
matched to 50 Ohms for ease of integration into Multi-
Chip-Modules (MCMs). All data is taken with the chip
in a 50 ohm test fixture connected via 0.025mm (1
mil) diameter wire bonds of length 0.31mm (12 mils).
For applications which require optimum OIP3, Idd
should be set for 520 mA, to yield +41 dBm OIP3.
For applications which require optimum output P1dB,
Idd should be set for 820 mA, to yield up to +32 dBm
Output P1dB.
Electrical Specifications, T_A = +25° C, Vdd = +7V, Idd = 820 mA^[1]
Parameter
Min.
Typ.
Max.
Min.
Typ.
Frequency Range
6 - 10
6.8 - 9
Gain
21
24
22
25
Gain Variation Over Temperature
0.05
0.07
0.05
Input Return Loss
10
10
Output Return Loss
10
10
Output Power for 1 dB
Compression (P1dB)
27
30
28.5
31.5
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)^[2]
31.5
32
41
41
Supply Current (Idd)
820
820
[1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.
[2] Measurement taken at 7V @ 520mA, Pin / Tone = -15 dBm
Max.
0.07
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3 - 70
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com