HMC536MS8G_08 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC POSITIVE CONTROL T/R SWITCH, DC - 6 GHz

HMC536MS8G / 536MS8GE
v03.0806
GaAs MMIC POSITIVE CONTROL
T/R SWITCH, DC - 6 GHz
Typical Applications
The HMC536MS8G / HMC536MS8GE is ideal for:
• Cellular/PCS/3G Infrastructure
• ISM/MMDS/WiMAX
• CATV/CMTS
• Test Instrumentation
10
Functional Diagram
Features
Input P0.1dB: +34 dBm @ +5V
Insertion Loss: 0.5 dB
Positive Control: +3V or +5V
MS8G SMT Package, 14.8 mm²
Isolation: 27 dB
Very Fast Switching Speed
Included in the HMC-DK005 Designer’s Kit
General Description
The HMC536MS8G & HMC536MS8GE are DC to
6 GHz GaAs MMIC T/R switches in 8 lead MSOP8G
surface mount packages with an exposed ground
paddle. The switch is ideal for cellular/PCS/3G
basestation applications featuring low 0.5 dB inser-
tion loss and +55 dBm input IP3. Power handling is
excellent up through 6 GHz with the switch offering
a P0.1dB compression point of +29 dBm at +3 volts
control. On-chip circuitry allows positive voltage con-
trol of 0/+3 volts or 0/+5 volts at very low DC currents.
10 - 294
Electrical Specifications, T_A = +25° C, Vctl = 0/+3 Vdc to +5 Vdc, 50 Ohm System
Insertion Loss
Parameter
Isolation (RFC to RF1/RF2)
Return Loss
Input Power for 0.1 dB Compression
(Vctl = 3V)
(Vctl = 5V)
Input Third Order Intercept
(Vctl = 3V, 5V)
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
tRISE, tFALL (10/90%
RF)
tON, tOFF (50% CTL to 10/90% RF)
Frequency
DC - 3.0 GHz
DC - 4.5 GHz
DC - 6.0 GHz
DC - 4.0 GHz
4.0 - 5.0 GHz
5.0 - 6.0 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 6.0 GHz
0.5 - 6.0 GHz
0.5 - 6.0 GHz
0.5 - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 6.0 GHz
DC - 6.0 GHz
Min.
Typ.
Max.
0.5
0.8
0.6
0.9
0.7
1.0
23
27
26
30
27
32
25
20
12
27
29
32
34
56
52
48
15
30
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com