HMC517_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz

v02.0907
HMC517
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 17 - 26 GHz
1
Typical Applications
Features
The HMC517 is ideal for use as a LNA or Driver ampli-
fier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Noise Figure: 2.2 dB
Gain: 19 dB
OIP3: +24 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
Die Size: 2.14 x 1.32 x 0.1 mm
Functional Diagram
General Description
The HMC517 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) which
covers the 17 to 26 GHz frequency range. The
HMC517 provides 19 dB of small signal gain, 2.2 dB
of noise figure and has an output IP3 greater than
+24 dBm. The chip can easily be integrated into hy-
brid or MCM assemblies due to its small size. All data
is tested with the chip in a 50 Ohm test fixture con-
nected via 0.075mm (3 mil) ribbon bonds of minimal
length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter
bondwires may also be used to make the RFIN and
RFOUT connections.
Electrical Specifications, T_A = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
Min.
Typ.
Max. Min.
Typ.
Max. Units
17 - 22
22 - 26
GHz
16
19
15
18
dB
0.015 0.025
0.015 0.025 dB/ °C
2.2
2.7
2.4
2.9
dB
17
15
dB
10
10
dB
8
11
9.5
12.5
dBm
15
15
dBm
23
24
dBm
65
88
65
88
mA
1 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com