HMC516_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 7 - 17 GHz

v02.0907
HMC516
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 17 GHz
1
Typical Applications
Features
The HMC516 is ideal for use as a LNA or driver ampli-
fier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Noise Figure: 1.8 dB
Gain: 20 dB
OIP3: +20 dBm
Single Supply: 3V @ 65 mA
50 Ohm Matched Input/Output
Die Size: 2.52 x 1.32 x 0.1 mm
Functional Diagram
General Description
The HMC516 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifier (LNA) which
covers the 7 to 17 GHz frequency range. The HMC516
provides 20 dB of small signal gain, 1.8 dB of noise
figure and has an output IP3 greater than +20 dBm.
The chip can easily be integrated into hybrid or MCM
assemblies due to its small size. All data is tested
with the chip in a 50 Ohm test fixture connected via
0.075mm (3 mil) ribbon bonds of minimal length 0.31
mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires
may also be used to make the RFIN and RFOUT
connections.
Electrical Specifications, T_A = +25° C, Vdd 1, 2, 3 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
Min. Typ. Max. Min.
Typ.
7-9
9 - 12
17
19.5
18
20.5
0.02 0.03
0.02
2.5
3.3
2.0
8
10
13
15
10
13
12
15
15
16
20
20
65
88
65
Max. Min. Typ. Max. Units
12 - 17
GHz
18
20.5
dB
0.03
0.02 0.03 dB/ °C
2.6
1.8
2.3
dB
10
dB
17
dB
13
16
dBm
17
dBm
20
dBm
88
65
88
mA
1 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com