English
Language : 

HMC509LP5_11 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – MMIC VCO w/ HALF FREQUENCY OUTPUT 7.8 - 8.8 GHz
v04.0811
Typical Applications
Low noise MMIC VCO w/Half Frequency, for:
• VSAT Radio
• Point to Point/Multi-Point Radio
• Test Equipment & Industrial Controls
• Military End-Use
Functional Diagram
8
HMC509LP5 / 509LP5E
MMIC VCO w/ HALF FREQUENCY
OUTPUT 7.8 - 8.8 GHz
Features
Dual Output: Fo = 7.8 - 8.8 GHz
Fo/2 = 3.9 - 4.4 GHz
Pout: +13 dBm
Phase Noise: -115 dBc/Hz @100 kHz Typ.
No External Resonator Needed
32 Lead 5x5mm SMT Package: 25mm²
General Description
The HMC509LP5 & HMC509LP5E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
VCOs. The HMC509LP5 & HMC509LP5E integrate
resonators, negative resistance devices, varactor
diodes and feature a half frequency output. The VCO’s
phase noise performance is excellent over tem-
perature, shock, and process due to the oscillator’s
monolithic structure. Power output is +13 dBm typical
from a +5V supply. The voltage controlled oscillator
is packaged in a leadless QFN 5x5 mm surface
mount package, and requires no external matching
components.
8-1
Electrical Specifications, TA = +25° C, Vcc = +5V
Frequency Range
Parameter
Power Output
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT
Tune Voltage
Supply Current (Icc) (Vcc = +5.0V)
Tune Port Leakage Current (Vtune= 13V)
Output Return Loss
Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= 5V
Frequency Drift Rate
Min.
Fo
Fo/2
RFOUT
+10
RFOUT/2
+5
Vtune
2
200
1/2
2nd
3rd
Typ.
7.8 - 8.8
3.9 - 4.4
-115
250
2
35
10
32
5
10
0.9
Max.
+15
+10
13
270
10
Units
GHz
GHz
dBm
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com