HMC416LP4_08 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – MMIC VCO w/ BUFFER AMPLIFIER, 2.75 - 3.0 GHz

v02.0805
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Functional Diagram
11
HMC416LP4 / 416LP4E
MMIC VCO w/ BUFFER
AMPLIFIER, 2.75 - 3.0 GHz
Features
Pout: +4.5 dBm
Phase Noise: -114 dBc/Hz @100 k Hz
No External Resonator Needed
Single Supply: 3V @ 37 mA
QFN Leadless SMT Package, 16 mm²
General Description
The HMC416LP4 & HMC416LP4E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC VCOs
with integrated resonators, negative resistance
devices, varactor diodes, and buffer amplifiers.
Covering 2.75 to 3.0 GHz, the VCO’s phase noise
performance is excellent over temperature, shock,
vibration and process due to the oscillator’s monolithic
structure. Power output is 4.5 dBm typical from a
single supply of 3V @ 37 mA. The voltage controlled
oscillator is packaged in a low cost leadless QFN 4 x 4
mm surface mount package.
11 - 66
Electrical Specifications, T_A = +25° C, Vcc = +3V
Parameter
Min.
Frequency Range
Power Output
1.5
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
0
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
Typ.
2.75 - 3.0
4.5
-114
37
9
-5
-16
3
-1
0.3
Max.
10
10
Units
GHz
dBm
dBc/Hz
V
mA
μA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com