HMC407MS8G_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz

HMC407MS8G / 407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
11
Typical Applications
This amplifier is ideal for use as a power
amplifier for 5 - 7 GHz applications:
• UNII
• HiperLAN
Features
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5V
Power Down Capability
No External Matching Required
Functional Diagram
General Description
The HMC407MS8G & HMC407MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power amplifiers which
operate between 5 and 7 GHz. The amplifier requires
no external matching to achieve operation and is
thus truly 50 Ohm matched at input and output. The
amplifier is packaged in a low cost, surface mount
8 leaded package with an exposed base for im-
proved RF and thermal performance. The amplifier
provides 15 dB of gain, +29 dBm of saturated power
at 28% PAE from a +5V supply voltage. Power down
capability is available to conserve current consum-
ption when the amplifier is not in use.
Electrical Specifications, T_A = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
Min.
10
21
32
Typ.
5-7
15
0.025
12
15
25
29
37
5.5
0.002 / 230
7
30
Max.
18
0.035
Min.
Typ.
Max. Units
5.6 - 6.0
GHz
12
15
18
dB
0.025
0.035 dB/ °C
12
dB
15
dB
22
25
dBm
29
dBm
36
40
dBm
5.5
dB
0.002 / 230
mA
7
mA
30
ns
11 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com