HMC406MS8G_07 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz

HMC406MS8G / 406MS8GE
v04.0307
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
5
Typical Applications
This amplifier is ideal for use as a driver
amplifier for 5.0 - 6.0 GHz applications:
• UNII
• HiperLAN & 802.11a WLAN
Features
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
Functional Diagram
General Description
The HMC406MS8G & HMC406MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Transistor
(HBT) MMIC Power amplifiers which operate between
5.0 and 6.0 GHz. The amplifier is packaged in a low
cost, surface mount 8 leaded package with an exposed
base for improved RF and thermal performance. With
a minimum of external components, the amplifier pro-
vides 17 dB of gain and +29 dBm of saturated power
at 38% PAE from a +5.0V supply voltage. Vpd can be
used for full power down or RF output power/current
control.
Electrical Specifications, T_A = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Min.
Typ.
Max.
5.0 - 6.0
13
16
21
0.03
0.04
10
8
21
24
27
34
38
6.0
Vpd = 0V/5V
0.002 / 300
Vpd = 5V
7
tON, tOFF
35
Min.
Typ.
Max. Units
5.7 - 5.9
GHz
14
17
21
dB
0.03
0.04 dB/ °C
11
dB
9
dB
24
27
dBm
29
dBm
34
38
dBm
6.0
dB
0.002 / 300
mA
7
mA
35
ns
5 - 142
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com