HMC406MS8G Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 5.0 - 6.0 GHz

v02.1202
MICROWAVE CORPORATION
HMC406MS8G
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5.0 - 6.0 GHz
8
Typical Applications
This amplifier is ideal for use as a driver
amplifier for 5.0 - 6.0 GHz applications:
• UNII
• HiperLAN & 802.11a WLAN
Functional Diagram
Features
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
General Description
The HMC406MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC Power amplifier which operates between
5.0 and 6.0 GHz. The amplifier is packaged in a
low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal
performance. With a minimum of external com-
ponents, the amplifier provides 17 dB of gain and
+29 dBm of saturated power at 38% PAE from
a +5.0V supply voltage. Vpd can be used for full
power down or RF output power/current control.
Electrical Specifications, T_A = +25° C, Vs = 5V, Vpd = 5V
Parameter
Min.
Typ.
Max.
Frequency Range
5.0 - 6.0
Gain
13
16
21
Gain Variation Over Temperature
0.03
0.04
Input Return Loss
10
Output Return Loss
8
Output Power for 1 dB Compression (P1dB)
21
24
Saturated Output Power (Psat)
27
Output Third Order Intercept (IP3)
34
38
Noise Figure
6.0
Supply Current (Icq)
Vpd = 0V/5V
0.002 / 300
Control Current (Ipd)
Vpd = 5V
7
Switching Speed
tON, tOFF
35
Min.
Typ.
Max. Units
5.7 - 5.9
GHz
14
17
21
dB
0.03
0.04 dB/ °C
11
dB
9
dB
24
27
dBm
29
dBm
34
38
dBm
6.0
dB
0.002 / 300
mA
7
mA
35
ns
8 - 142
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com