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HMC385LP4 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – MMIC VCO w/ BUFFER AMPLIFIER, 2.25 - 2.5 GHz
v01.0604
MICROWAVE CORPORATION
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier for:
• Wireless Infrastructure
• Industrial Controls
• Test Equipment
• Military
Functional Diagram
15
HMC385LP4
MMIC VCO w/ BUFFER
AMPLIFIER, 2.25 - 2.5 GHz
Features
Pout: +4.5 dBm
Phase Noise: -115 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 35 mA
QFN Leadless SMT Package, 16 mm2
General Description
The HMC385LP4 is a GaAs InGaP Heterojunc-
tion Bipolar Transistor (HBT) MMIC VCO with
integrated resonator, negative resistance device,
varactor diode, and buffer amplifier. Covering 2.25
to 2.5 GHz, the VCO’s phase noise performance
is excellent over temperature, shock, vibration
and process due to the oscillator’s monolithic
structure. Power output is 4.5 dBm typical from
a single supply of 3V @ 35mA. The voltage con-
trolled oscillator is packaged in a low cost lead-
less QFN 4 x 4 mm surface mount package.
15 - 14
Electrical Specifications, TA = +25° C, Vcc = +3V
Parameter
Min.
Frequency Range
Power Output
1.5
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
0
Supply Current (Icc) (Vcc = +3.0V)
Tune Port Leakage Current
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +5V
Frequency Drift Rate
Typ.
2.25 - 2.5
4.5
-115
35
9
-7
-23
2.0
-2
0.25
Max.
10
10
Units
GHz
dBm
dBc/Hz
V
mA
µA
dB
dBc
dBc
MHz pp
MHz/V
MHz/°C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com