HMC376LP3_10 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz

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7
Typical Applications
The HMC376LP3 / HMC376LP3E is ideal for:
• Cellular/3G Infrastructure
• Base Stations & Repeaters
• CDMA, W-CDMA, & TD-SCDMA
• Private Land Mobile Radio
• GSM/GPRS & EDGE
• UHF Reallocation Applications
Functional Diagram
HMC376LP3 / 376LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Features
Noise Figure: 0.7 dB
Output IP3: +36 dBm
Gain: 15 dB
Externally Adjustable Supply Current
Single Positive Supply: +5V
50 Ohm Matched Input/Output
General Description
The HMC376LP3 & HMC376LP3E are GaAs PHEMT
MMIC Low Noise Amplifiers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The amplifier
has been optimized to provide 0.7 dB noise figure,
15 dB gain and +36 dBm output IP3 from a single
supply of +5V. The HMC376LP3(E) feature an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application. For applications which require
improved noise figure, please see the HMC617LP3(E).
7-1
Electrical Specifications, T_A = +25° C, Vdd = +5V, Rbias = 10 Ohms*
Frequency Range
Gain
Parameter
Min.
Typ.
Max.
810 - 960
12.5
14.5
Min.
Typ.
700 - 1000
11.5
14.5
Gain Variation Over Temperature
0.005
0.01
0.005
Noise Figure
0.7
1.0
0.7
Input Return Loss
13
14
Output Return Loss
12
12
Reverse Isolation
20
22
Output Power for 1dB Compression (P1dB)
21.5
21
Saturated Output Power (Psat)
22
22
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
36
36
Supply Current (Idd)
73
73
*Rbias resistor value sets current, see application circuit herein.
Max.
0.01
1.0
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com