HMC372LP3_06 Datasheet, PDF (1/8 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz

v02.0605
5
Typical Applications
The HMC372LP3 / HMC372LP3E is ideal for
basestation receivers:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• Private Land Mobile Radio
Functional Diagram
HMC372LP3 / 372LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 700 - 1000 MHz
Features
Noise Figure: <1.0 dB
+34 dBm Output IP3
Gain: 15 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0 V @ 100 mA
50 Ohm Matched Output
General Description
The HMC372LP3 & HMC372LP3E are GaAs PHEMT
MMIC Low Noise Amplifiers that are ideal for GSM
& CDMA cellular basestation front-end receivers
operating between 700 and 1000 MHz. The amplifier
has been optimized to provide 1.0 dB noise figure, 15
dB gain and +34 dBm output IP3 from a single supply
of +5.0V @ 100 mA. Input and output return losses are
25 and 14 dB respectively with the LNA requiring only
four external components to optimize the RF Input
match, RF ground and DC bias. The HMC372LP3 &
HMC372LP3E share the same package and pinout
with the HMC356LP3 high IP3 LNA. A low cost,
leadless 3x3 mm (LP3) SMT QFN package houses
the low noise amplifier.
Electrical Specifications, T_A = +25° C, Vs = +5V
Frequency Range
Gain
Parameter
Min.
Typ.
810 - 960
12.5
14.5
Gain Variation Over Temperature
0.008
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
1.0
25
14
20
18
21
23.5
34
100
Max.
0.015
1.3
Min.
Typ.
Max.
700 - 1000
11.5
14.5
0.008
0.015
1.0
1.3
25
12
22
17
20
22.5
30
33
100
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
5 - 96
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com