HMC358MS8G Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – MMIC VCO w/ BUFFER AMPLIFIER, 5.8 - 6.8 GHz

v02.0202
MICROWAVE CORPORATION
Typical Applications
Low noise MMIC VCO w/Buffer Amplifier
for C-Band applications such as:
• UNII & Pt. to Pt. Radios
• 802.11a & HiperLAN WLAN
• VSAT Radios
Functional Diagram
15
HMC358MS8G
MMIC VCO w/ BUFFER
AMPLIFIER, 5.8 - 6.8 GHz
Features
Pout: +11 dBm
Phase Noise: -110 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 100 mA
15mm² MSOP8G SMT Package
General Description
The HMC358MS8G is a GaAs InGaP Hetero-
junction Bipolar Transistor (HBT) MMIC VCO. The
HMC358MS8G integrates a resonator, negative
resistance device, varactor diode, and buffer
amplifier. The VCO’s phase noise performance is
excellent over temperature, shock, and process
due to the oscillator’s monolithic structure. Power
output is 11 dBm typical from a 3.0V supply volt-
age. The voltage controlled oscillator is packaged
in a low cost, surface mount 8 lead MSOP pack-
age with an exposed base for improved RF and
thermal performance.
Electrical Specifications, T_A = +25° C, Vcc = +3V
Parameter
Min.
Frequency Range
Power Output
8
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output
Tune Voltage (Vtune)
0
Supply Current (Icc)
Tune Port Leakage Current (Vtune= 10V)
Output Return Loss
Harmonics
2nd
3rd
Pulling (into a 2.0:1 VSWR)
Pushing @ Vtune= +3V
Frequency Drift Rate
Typ.
5.8 - 6.8
11
-110
100
9
-10
-20
10
150
0.8
Max.
10
10
Units
GHz
dBm
dBc/Hz
V
mA
µA
dB
dB
dB
MHz pp
MHz/V
MHz/°C
15 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com