HMC356LP3_06 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 350 - 550 MHz

v02.0605
5
Typical Applications
The HMC356LP3 / HMC356LP3E is ideal for
basestation receivers:
• GSM 450 & GSM 480
• CDMA 450
• Private Land Mobile Radio
Functional Diagram
HMC356LP3 / 356LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
Features
Noise Figure: ≤1.0 dB
+38 dBm Output IP3
Gain: 17 dB
Very Stable Gain vs. Supply & Temperature
Single Supply: +5.0V @ 104 mA
50 Ohm Matched Output
General Description
The HMC356LP3 & HMC356LP3E are high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers
is ideal for GSM & CDMA cellular basestation and
Mobile Radio front-end receivers operating between
350 and 550 MHz. This LNA has been optimized to
provide 1.0 dB noise figure, 17 dB gain and +38 dBm
output IP3 from a single supply of +5.0V @ 104 mA.
Input and output return losses are 15 dB typical, with
the LNA requiring only four external components to
optimize the RF input match, RF ground and DC bias.
The HMC356LP3 & HMC356LP3E share the same
package and pinout with the HMC372LP3 high IP3
LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN
package houses the low noise amplifier.
Electrical Specifications, T_A = +25° C, Vs = +5V
Frequency Range
Gain
Parameter
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
Min.
Typ.
Max.
350 - 550
15
17
0.0032
0.010
1.0
1.4
17
12
24
17
21
22.5
34
38
104
Units
MHz
dB
dB / °C
dB
dB
dB
dB
dBm
dBm
dBm
mA
5 - 90
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com