HMC351S8 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC HIGH IP3 DOUBLEBALANCED MIXER, 0.7 - 1.2 GHz

v02.1001
MICROWAVE CORPORATION
HMC351S8
GaAs MMIC HIGH IP3 DOUBLE-
BALANCED MIXER, 0.7 - 1.2 GHz
Typical Applications
The HMC351S8 is ideal for:
• Cellular Basestations
• Cable Modems
• Fixed Wireless Access Systems
Functional Diagram
12
Features
Conversion Loss: 9.0 dB
LO/IF Isolation: 35 dB
LO/RF Isolation: 42 dB
Input IP3: +25 dBm
Input IP2: +48 dBm
General Description
The HMC351S8 is a double balanced mixer in an
8 lead plastic surface mount package. The passive
GaAs schottky diode mixer implements planar on
chip baluns and requires no external components.
The mixer can be used as an upconverter, down
converter, or modulator. The mixer provides 9 dB
conversion loss and +25 dBm IIP3 with LO drive
levels of +19 dBm. The design was optimized for
low cost high volume applications where high con-
verter linearity is required. The high LO suppres-
sion of 42 dB yields excellent carrier suppression for
modulator applications.
Electrical Specifications, T_A = +25° C
Parameter
LO = +19 dBm, IF = 100 MHz
Min.
Typ.
Max.
Frequency Range, RF & LO
0.7 - 1.2
Frequency Range, IF
DC - 0.3
Conversion Loss
9
11.5
Noise Figure (SSB)
9
11.5
LO to RF Isolation
36
42
LO to IF Isolation
31
35
RF to IF Isolation
9
13
IP3 (Input)
22
25
IP2 (Input)
40
48
1 dB Compression (Input)
12
16
*Unless otherwise noted, all measurements performed as downconverter, IF= 100 MHz.
Units
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
12 - 174
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com