HMC347C8 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC SMT HIGH ISOLATION SPDT SWITCH, DC - 8.0 GHz

MICROWAVE CORPORATION
v01.0404
HMC347C8
GaAs MMIC SMT HIGH ISOLATION
SPDT SWITCH, DC - 8.0 GHz
Typical Applications
The HMC347C8 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military Radios, Radar & ECM
• Test Instrumentation
Features
Isolation: 50 dB @ 2.5 GHz
36 dB @ 8.0 GHz
Insertion Loss: 2.0 dB Typical
Non-Reflective Design
Surface Mount Ceramic Package
Functional Diagram
14
General Description
The HMC347C8 is a broadband high isolation
non-reflective GaAs MESFET SPDT switch in
a non-hermetic surface mount ceramic package.
Covering DC to 8.0 GHz, the switch features >50
dB isolation up to 2 GHz and >35 dB isolation up
to 8.0 GHz. The switch operates using comple-
mentary negative control voltage logic lines of -5/
0V and requires no bias supply. This SPDT is an
excellent replacement for the HMC132C8 SPDT.
Electrical Specifications, T_A = +25° C, With 0/-5V Control, 50 Ohm System
Parameter
Insertion Loss
Isolation
Return Loss
“On State”
Return Loss RF1, RF2
“Off State”
Input Power for 1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone, 1 MHz Tone Separation)
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
Frequency
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
DC - 2.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
0.5 - 8.0 GHz
0.5 - 8.0 GHz
DC - 8.0 GHz
Min.
Typ.
Max.
1.7
2.0
2.0
2.4
2.4
2.8
49
54
35
40
32
36
10
13
7
10
6
9
9
6
6
19
23
38
43
3
6
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
14 - 194
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order Online at www.hittite.com