HMC342_07 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz

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Typical Applications
The HMC342 is ideal for:
• Microwave Point-to-Point Radios
• Millimeterwave Point-to-Point Radios
• VSAT & SATCOM
Functional Diagram
HMC342
GaAs MMIC LOW NOISE
AMPLIFIER, 13 - 25 GHz
Features
Noise Figure : 3.5 dB
Gain: 20 dB
Single Supply : +3V @ 41mA
Small Size: 1.06 x 2.02 mm
General Description
The HMC342 chip is a GaAs MMIC Low Noise
Amplifier (LNA) which covers the frequency range
of 13 to 25 GHz. The chip can easily be integrated
into Multi-Chip Modules (MCMs) due to its small
(2.14 mm²) size. The chip utilizes a GaAs PHEMT
process offering 20 dB gain from a single bias
supply of +3V @ 41mA with a noise figure of 3.5 dB.
All data is with the chip in a 50 ohm test fixture con-
nected via 0.025 mm (1 mil) diameter wire bonds of
minimal length 0.31 mm (<12 mils).
Electrical Specifications, T_A = +25° C, Vdd = +3V
Parameter
Min.
Frequency Range
Gain
16
Gain Variation Over Temperature
Noise Figure
Input Return Loss
6
Output Return Loss
6
Reverse Isolation
39
Output Power for 1dB Compression (P1dB)
1
Saturated Output Power (Psat)
3
Output Third Order Intercept (IP3)
8
Supply Current (Idd)(Vdd = +3V)
Typ.
13 - 25
21
.03
3.5
13
14
45
5
8
13
41
Max.
26
.04
4.5
55
Units
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
dBm
dBm
mA
1 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com