HMC336MS8G_08 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC SPDT NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC* - 6 GHz

HMC336MS8G / 336MS8GE
v03.0607
GaAs MMIC SPDT NON-REFLECTIVE
POSITIVE CONTROL SWITCH, DC* - 6 GHz
Typical Applications
This switch is suitable for usage in DC - 6.0 GHz 50-
Ohm or 75-Ohm systems:
• Broadband
• Fiber Optics
• Switched Filter Banks
• Wireless below 6.0 GHz
Features
Broadband Performance: DC - 6 GHz
High Isolation: 42 dB@ 6 GHz
Low Insertion Loss: 1.6 dB@ 6 GHz
MSOP8G SMT Package
10
Functional Diagram
General Description
The HMC336MS8G & HMC336MS8GE are broad-
band non-reflective GaAs MESFET SPDT switches
in low cost 8 lead MSOP8G surface mount packages
with an exposed ground paddle. Covering DC to 6
GHz, this switch offers high isolation and low inser-
tion loss. The switch operates using a positive con-
trol voltage of 0/+5 Volts, and requires a fixed bias of
+5V. This switch is suitable for usage in 50-Ohm or
75-Ohm systems.
10 - 184
Electrical Specifications, T_A = +25° C, With 0/+5V Control, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Insertion Loss
DC - 2.0 GHz
1.2
DC - 4.0 GHz
1.4
DC - 6.0 GHz
1.6
Isolation
DC - 2.0 GHz
42
47
DC - 4.0 GHz
39
44
DC - 6.0 GHz
37
42
Return Loss
“On State”
DC - 2.0 GHz
DC - 6.0 GHz
9
6
12
9
Return Loss (RF1, RF2)
“Off State” 2.0 - 6.0 GHz
13
18
Input Power for 1 dB Compression
0.5 - 6.0 GHz
20
25
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone, 1 MHz Tone Spacing)
0.5 - 6.0 GHz
37
42
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 6.0 GHz
8
20
* DC blocking capacitors are required at ports RFC, RF1 and RF2.
Their value will determine the lowest transmission frequency.
Max.
1.6
1.8
2.0
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com