English
Language : 

HMC336MS8G Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs MMIC SPDT NON-REFLECTIVE POSITIVE CONTROL SWITCH, DC - 6.0 GHz
v01.1202
HMC336MS8G
MICROWAVE CORPORATION
GaAs MMIC SPDT NON-REFLECTIVE
POSITIVE CONTROL SWITCH, DC* - 6.0 GHz
Typical Applications
This switch is suitable for usage in DC - 6.0 GHz
50-Ohm or 75-Ohm systems:
• Broadband
• Fiber Optics
• Switched Filter Banks
• Wireless below 6.0 GHz
Functional Diagram
14
Features
Broadband Performance: DC - 6.0 GHz
High Isolation: 42 dB@ 6 GHz
Low Insertion Loss: 1.6 dB@ 6 GHz
MSOP8G SMT Package
General Description
The HMC336MS8G is a broadband non-reflec-
tive GaAs MESFET SPDT switch in a low cost
8 lead MSOP8G surface mount package with an
exposed ground paddle. Covering DC to 6.0 GHz,
this switch offers high isolation and low insertion
loss. The switch operates using a positive control
voltage of 0/+5 Volts, and requires a fixed bias of
+5V. This switch is suitable for usage in 50-Ohm
or 75-Ohm systems.
Electrical Specifications, TA = +25° C, With 0/+5V Control, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Insertion Loss
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
1.2
1.6
1.4
1.8
1.6
2.0
Isolation
DC - 2.0 GHz
42
47
DC - 4.0 GHz
39
44
DC - 6.0 GHz
37
42
Return Loss
“On State”
DC - 2.0 GHz
DC - 6.0 GHz
9
6
12
9
Return Loss (RF1, RF2)
“Off State” 2.0 - 6.0 GHz
13
18
Input Power for 1 dB Compression
0.5 - 6.0 GHz
20
25
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone, 1 MHz Tone Spacing)
0.5 - 6.0 GHz
37
42
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 6.0 GHz
8
20
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
ns
ns
14 - 176
* DC blocking capacitors are required at ports RFC, RF1 and RF2.
Their value will determine the lowest transmission frequency.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com