HMC327MS8G_09 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz

HMC327MS8G / 327MS8GE
v06.1209
GaAs InGaP HBT MMIC
1/2 WATT POWER AMPLIFIER, 3 - 4 GHz
11
Typical Applications
The HMC327MS8G(E) is ideal for:
• Wireless Local Loop
• WiMAX & Fixed Wireless
• Access Points
• Subscriber Equipment
Features
High Gain: 21 dB
Saturated Power: +30 dBm @ 45% PAE
Output P1dB: +27 dBm
Single Supply: +5V
Power Down Capability
Low External Part Count
Compact MSOP Package: 14.8 mm²
Functional Diagram
General Description
The HMC327MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
power amplifier which operates between 3 and 4 GHz.
The amplifier is packaged in a low cost, surface mo-
unt 8 leaded package with an exposed base for
improved RF and thermal performance. With a mini-
mum of external components, the amplifier provides
21 dB of gain, +30 dBm of saturated power at 45%
PAE from a single +5V supply. Power down capability
is available to conserve current consumption when the
amplifier is not in use.
11 - 2
Electrical Specifications, T_A = +25 °C, Vs = 5V, Vctl = 5V
Parameter
Min.
Frequency Range
Gain
17
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
*See Application Circuit for proper biasing configuration.
24
36
Vctl* = 0V/5V
Vctl* = 5V
tON, tOFF
Typ.
3-4
21
0.025
15
8
27
30
40
5
0.002 / 250
7
40
Max.
24
0.035
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com