HMC327MS8G_07 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz

HMC327MS8G / 327MS8GE
v04.0607
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 3.0 - 4.0 GHz
5
Typical Applications
This amplifier is ideal for use as a power
amplifier for 3.3 - 3.6 GHz applications:
• Wireless Local Loop
Features
Gain: 21 dB
Saturated Power: +30 dBm
45% PAE
Supply Voltage: +5.0 V
Power Down Capability
Low External Part Count
Functional Diagram
General Description
The HMC327MS8G & HMC327MS8GE are high effi-
ciency GaAs InGaP Heterojunction Bipolar Transistor
(HBT) MMIC Power amplifiers which operate between
3.0 and 4.0 GHz. The amplifier is packaged in a low
cost, surface mount 8 leaded package with an exposed
base for improved RF and thermal performance. With
a minimum of external components, the amplifier pro-
vides 21 dB of gain, +30 dBm of saturated power at
45% PAE from a +5.0V supply voltage. Power down
capability is available to conserve current consump-
tion when the amplifier is not in use.
5 - 72
Electrical Specifications, T_A = +25° C, Vs = 5V, Vctl = 5V
Parameter
Min.
Frequency Range
Gain
17
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
24
36
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
Typ.
3.0 - 4.0
21
0.025
15
8
27
30
40
5.0
0.002 / 250
7
40
Max.
24
0.035
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com