HMC326MS8G_07 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz

HMC326MS8G / 326MS8GE
v07.0607
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
5
Typical Applications
The HMC326MS8G / HMC326MS8GE is ideal for:
• Microwave Radios
• Broadband Radio Systems
• Wireless Local Loop Driver Amplifier
Features
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5.0V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC driver amplifiers which operate
between 3.0 and 4.5 GHz. The amplifier is packaged
in a low cost, surface mount 8 leaded package with
an exposed base for improved RF and thermal perfor-
mance. The amplifier provides 21 dB of gain and +26
dBm of saturated power from a +5.0V supply voltage.
Power down capability is available to conserve current
consumption when the amplifier is not in use. Internal
circuit matching was optimized to provide greater than
40% PAE.
Electrical Specifications, T_A = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icc)
Control Current (Ipd)
Switching Speed
Min.
18
21
32
Vpd = 0V / 5V
tOn/tOff
Typ.
3.0 - 4.5
21
0.025
12
7
23.5
26
36
5
0.001 / 130
7
10
Max.
0.035
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
5 - 66
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com