HMC324MS8G Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz

MICROWAVE CORPORATION
HMC324MS8G
HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz
FEBRUARY 2001
V00.1200
Features
P1dB Output Power: + 16 dBm
1
Output IP3: +31 dBm
Single Supply: 8.75V
Ultra Small Package: MSOP8G
General Description
The HMC324MS8G is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT)
MMIC amplifier that contains two un-connected
amplifiers in parallel inside an 8 lead MSOPG
package. When used in conjunction with an
external balun, the outputs of the amplifier can
be combined to reduce the 2nd harmonic distor-
tion that is generated by the amplifier. With Vcc
at +7.5V, the HMC324MS8G offers 13 dB of
gain and with power combining and harmonic
cancellation, +22 dBm of output power can be
achieved. Using a Darlington feedback pair re-
sults in reduced sensitivity to normal process
variations and provides a good 50-ohm input/
output port match. This amplifier is ideal for RF
systems where high linearity is required. The
design can operate in 50-ohm and 75-ohm sys-
tems which makes it ideal for CATV head-end
and modem, and MCNS applications.
Guaranteed Performance, -40 to +60 deg C
Parameter
Min.
Frequency Range
Gain @ 25 °C
10
Gain Variation over Temperature
Input Return Loss
8
Output Return Loss
6
Reverse Isolation
16
Output Power for 1dB Compression (P1dB) @ 1 GHz
13
Saturated Output Power (Psat) @ 1 GHz
16
Output Third Order Intercept (IP3) @ 1 GHz
28
Noise Figure
Supply Current (Icc)
Vs= 8.75V, RBIAS= 22 Ohm
Typ.
Max.
DC - 3.0
13
16
0.015
0.025
13
9
20
16
19
31
6
57
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
dB
mA
Note: All specifications refer to a single amplifier.
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone]
1 - 156
Fax: [phone]
Web Site: www.hittite.com