HMC323_01 Datasheet, PDF (1/6 Pages) Hittite Microwave Corporation – GaAs InGaP HBT MMIC DRIVER AMPLIFIER, DC - 3.0 GHz

v01.0701
MICROWAVE CORPORATION
HMC323
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, DC - 3.0 GHz
Typical Applications
1
This Amplifier is ideal for RF Systems
where high linearity is required such as:
• 2.2 - 2.7 MMDS
• Cellular & Basestations
• CATV
• WirelessLAN
Functional Diagram
Features
P1dB Output Power: +16 dBm
Output IP3: +31 dBm
Gain: 13 dB
Single Supply: 8.75V
Ultra Small Package: SOT26
General Description
The HMC323 is a GaAs InGaP Heterojunction Bipo-
lar Transistor (HBT) MMIC amplifier that operates
from a single Vcc supply. The surface mount SOT26
amplifier can be used as a broadband gain stage
or used with external matching for optimized narrow
band applications. The HMC323 offers 13 dB of
gain and +19 dBm of saturated power while only
requiring 57 mA from a 8.75V supply. Using a Dar-
lington feedback pair results in reduced sensitivity
to normal process variations and provides a good
50-ohm input/output port match.
Electrical Specifications, T_A = +25° C
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB) @ 1 GHz
Saturated Output Power (Psat) @ 1 GHz
Output Third Order Intercept (IP3) @ 1 GHz
Noise Figure
Supply Current (Icc)
Vs= +8.75V, Rbias= 22 Ohm
Min.
Typ.
Max.
DC - 3.0
10
13
16
0.015
0.025
8
13
6
9
16
20
13
16
16
19
28
31
6
57
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
dB
mA
1 - 152
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Visit us at www.hittite.com, or Email at [e-mail]